Electric circuit and semiconductor device

ABSTRACT

As for a transistor, overlapped are factors such as a variation of a gate insulation film which occurs due to a difference of a manufacturing process and a substrate used and a variation of a crystalline state in a channel forming region and thereby, there occurs a variation of a threshold voltage and mobility of a transistor. 
     This invention provides an electric circuit which used a rectification type device in which an electric current is generated only in a single direction, when an electric potential difference was applied to electrodes at both ends of the device. Then, the invention provides an electric circuit which utilized a fact that, when a signal voltage is inputted to one terminal of the rectification type device, an electric potential of the other terminal becomes an electric potential offset only by the threshold voltage of the rectification type device.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. application Ser.No. 10/346,055, filed Jan. 17, 2003 now U.S. Pat. No. 6,891,356, nowallowed, which claims the benefit of a foreign priority applicationfiled in Japan as Serial No. 2002-009235 on Jan. 17, 2002. Thisapplication claims priority to each of these prior applications, and thedisclosures of the prior applications are considered part of (and areincorporated by reference in) the disclosure of this application.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a technology of an electric circuit. Also,this invention relates to a technology of a semiconductor apparatus.Further, this invention belongs to a technical field of a semiconductorapparatus having an electric circuit as represented by a source followercircuit, a differential amplifier, a sense amplifier, an operationalamplifier etc., a signal line drive circuit and a photoelectrictransducer device.

2. Description of the Related Art

An integrated circuit (IC) which has been widely used in portabletelephones and portable terminals etc. in these years is of a structurethat several hundreds of thousands to several million transistors andresistors were formed on a silicon substrate of approximately 5 mmsquare, and plays an important role in miniaturizing an apparatus andincreasing reliability of an apparatus and in mass production ofapparatuses.

Then, when an electric circuit to be used in the integrated circuit (IC)etc. is designed, in many cases, an amplifier circuit having a functionfor amplifying a voltage and an electric current of a signal with smallamplitude is designed. The amplifier circuit has been widely used, sinceit is an indispensable circuit for preventing the generation ofdistortion, thereby operating the electric circuit stably.

Here, as one example of the amplifier circuit, a structure of a sourcefollower circuit and its operation will be described. Firstly, astructural example of the source follower circuit is shown in FIG. 5A,and an operation in a steady state will be described. Then, by use ofFIGS. 5B and 5C, an operating point of the source follower circuit willbe described. Finally, an example of the source follower circuit of astructure different from FIG. 5A is shown in FIG. 6, and an operation ina transient state will be described.

Firstly, by use of the source follower circuit of FIG. 5A, the operationin the steady state will be described.

In FIG. 5A, reference numeral 11 designates a n-channel type amplifyingtransistor and reference numeral 12 designates a n-channel type biasingtransistor. In addition, the amplifying transistor 11 and the biasingtransistor 12 shown in FIG. 5A are of n-channel type but, they may beconfigured by use of p-channel type transistors. Also, here, for thepurpose of simplicity, it is assumed that the amplifying transistor 11and the biasing transistor 12 are the same in its characteristic andsize and further, an electric current characteristic is also ideal. Insum, it is assumed that, even if a voltage between a source and a drainof the amplifying transistor and the biasing transistor 12 varies, anelectric current value in a saturation region does not vary.

Also, a drain region of the amplifying transistor 11 is connected to apower supply line 13, and a source region is connected to a drain regionof the biasing transistor 12. A source region of the biasing transistor12 is connected to a power supply line 14.

A bias electric potential V_(b) is applied to a gate electrode of thebiasing transistor 12. Then, a power supply electric potential V_(dd) isapplied to the power supply line 13, and a ground electric potentialV_(ss) is applied to the power supply line 14.

In the source follower circuit shown in FIG. 5A, a gate electrode of theamplifying transistor 11 becomes an input terminal, and an inputelectric potential V_(in) is applied to the gate electrode of theamplifying transistor 11. Also, a source region of the amplifyingtransistor 11 becomes an output terminal, and an electric potential of asource region of the amplifying transistor 11 becomes an output electricpotential V_(out). The bias electric potential V_(b) is applied to thegate electrode of the biasing transistor 12, and it is assumed that,when the biasing transistor 12 operates in a saturation region, anelectric current shown by I_(b) flows. At this time, since theamplifying transistor 11 and the biasing transistor 12 are connectedserially, electric currents of the same amount flow through the bothtransistors. That is, when the electric current I_(b) flows through thebiasing transistor 12, the electric current I_(b) also flows through theamplifying transistor 11.

Here, the output electric potential V_(out) in the source followercircuit will be calculated. The output electric potential V_(out)becomes a value which is smaller than the input electric potentialV_(in) by just the voltage V_(gs1) between the gate and the source ofthe amplifying transistor 11. At this time, a relation of the inputelectric potential V_(in), the output electric potential V_(out) and thevoltage V_(gs1) between the gate and the source satisfies the followingequation (1).V _(out) =V _(in) −V _(gs1)  (1)

Then, since, in case that the amplifying transistor 11 operates in thesaturation region, the electric current I_(b) flows through theamplifying transistor 11, it is necessary that the voltage V_(gs1)between the gate and the source of the amplifying transistor 11 is equalto the bias electric potential V_(b). Then, the following equation (2)is achieved. However, the equation (2) is achieved only when theamplifying transistor 11 and the biasing transistor 12 operate in thesaturation region.V _(out) =V _(in) −V _(b)  (2)

Then, by use of FIGS. 5B and 5C showing a relation of voltages andelectric currents of the amplifying transistor 11 and the biasingtransistor 12, the operating point of the source follower circuit willbe described. For more detail, a case that the voltage V_(gs1) betweenthe gate and the source of the amplifying transistor 11 is the samevalue as the voltage V_(gs2) between the gate and the source of thebiasing transistor 12 will be described by use of FIG. 5B. Then, a casethat the voltage V_(gs1) between the gate and the source of theamplifying transistor 11 is a different value which is different fromthe voltage V_(gs2) between the gate and the source of the biasingtransistor 12, and for example, the biasing transistor 12 operates in alinear region will be described by use of FIG. 5C.

In FIG. 5B, a dotted line 21 shows a relation of a voltage and anelectric current when the voltage V_(gs1) between the gate and thesource of the amplifying transistor 11 is V_(b), and a solid line 22shows a relation of a voltage and a electric current when the voltageV_(gs2) between the gate and the source of the biasing transistor 12 isV_(b). Also, in FIG. 5C, a dotted line 21 shows a relation of a voltageand a electric current when the voltage V_(gs1) between the gate and thesource of the amplifying transistor 11 is V_(b)′, and a solid line 22shows a relation of a voltage and a electric current when the voltageV_(gs2) between the gate and the source of the biasing transistor 12 isV_(b).

In FIG. 5B, since the voltage V_(gs1) between the gate and source of theamplifying transistor 11 and the voltage V_(gs2) between the gate andthe source of the biasing transistor 12 are the same values and further,the bias electric potential V_(b) and the voltage V_(gs2) between thegate and the source of the biasing transistor 12 are the same value, thevoltage V_(gs1) between the gate and the source of the amplifyingtransistor 11 is the same value as the bias electric potential V_(b).That is, V_(gs1)=V_(gs2)=V_(b) is achieved, and as shown in FIG. 5B, theamplifying transistor 11 and the biasing transistor 12 operate in thesaturation region. At this time, a relation of the input electricpotential V_(in) and the output electric potential V_(out) becomeslinear.

On the other hand, in FIG. 5C, the voltage V_(gs1) between the gate andthe source of the amplifying transistor 11 is a different value which isdifferent from the voltage V_(gs2) between the gate and the source ofthe biasing transistor 12. Then, the voltage V_(gs2) between the gateand the source of the biasing transistor 12 is the same value as thebias electric potential V_(b). Also, it is assumed that the voltageV_(gs1) between the gate and the source of the amplifying transistor 11is a bias electric potential V_(b)′. In sum, V_(gs2)=V_(b) andV_(gs1)=V_(b)′ are satisfied, and as shown in FIG. 5C, the amplifyingtransistor 11 operates in the saturation region, and the biasingtransistor 12 operates in the linear region. At this time, a relation ofthe input electric potential V_(in), the output electric potentialV_(out) and the bias electric potential V_(b)′ satisfies the followingequation (3).V _(out) =V _(in) −V _(b)′  (3)

If it is assumed that an electric current flowing when the biasingtransistor 12 operates in the linear region is Ib′, Ib′<Ib is satisfied.In sum, V_(b)′<V_(b) is satisfied, and values of both the input electricpotential V_(in) and the electric current Ib′ are lessened. Then, thebias electric potential V_(b)′ is also lessened. At this time, arelation of the input electric potential V_(in) and the output electricpotential V_(out) becomes non-linear.

Summarizing the foregoing, in the source follower circuit in the steadystate, in order to enlarge an amplitude of the output electric potentialV_(out), it is desirable that the bias electric potential V_(b) islessened. This is because of the following two reasons.

A first reason is that, as shown in Equation (2), when the bias electricpotential V_(b) is small, the output electric potential V_(out) can beenlarged. A second reason is that, in case that a value of the biaselectric potential V_(b) is large, when the input electric potentialV_(in) is lessened, the biasing transistor 12 operates in the linearregion. When the biasing transistor 12 operates in the linear region,the relation of the input electric potential V_(in) and the outputelectric potential V_(out) is apt to become non-linear.

In addition, since it is necessary that the biasing transistor 12 is ina conductive state, it is necessary to set a value of the bias electricpotential V_(b) to be a value which is larger than the threshold voltageof the biasing transistor 12.

The operation of the source follower circuit in the steady state hasbeen described until this point and, subsequently, an operation of thesource follower circuit in the transient state will be described by useof FIGS. 6A–B.

The source follower circuit shown in FIGS. 6A–B is of a structure whichwas designed by adding a capacity device 15 to the circuit of FIG. 5A.One terminal of the capacity device 15 is connected to the source regionof the amplifying transistor 11, and the other terminal is connected toa power supply line 16. A ground electric potential V_(ss) is applied tothe power supply line 16.

An electric potential difference between both electrodes of the capacitydevice 15 becomes identical to the output electric potential V_(out) ofthe source follower circuit. Here, by use of FIG. 6A, an operation incase of V_(out)<V_(in)−V_(b) will be described, and then, by use of FIG.6B, an operation in case of V_(out)>V_(in)−V_(b) will be described.

Firstly, by use of FIG. 6A, an operation of the source follower circuitin the steady state in case of V_(out)<V_(in)−V_(b) will be described.

In FIG. 6A, at a time point of t=0, a value of the voltage V_(gs1)between the gate and the source of the amplifying transistor 11 islarger than a value of the voltage V_(gs2) between the gate and thesource of the biasing transistor 12. Therefor, a large electric currentflows through the amplifying transistor 11 and electric charge israpidly held in the capacity device 15. Then, the output electricpotential V_(out) is enlarged, and a value of the voltage V_(gs1)between the gate and the source of the amplifying transistor 11 isreduced.

Then, based upon the passage of time (t=t₁, t₁>0), when the voltageV_(gs1) between the gate and the source of the amplifying transistor 11becomes equal to the bias electric potential V_(b), it falls in thesteady state. At this time, the relation of the output electricpotential V_(out), the input electric potential V_(in) and the biaselectric potential V_(b) satisfy the above-described Equation (2).

Summarizing the foregoing, in case of V_(out)<V_(in)−V_(b), since thevoltage V_(gs1) between the gate and the source of the amplifyingtransistor 11 is larger than the bias electric potential V_(b), a largeelectric current flows through the amplifying transistor 11, andelectric charge is rapidly held in the capacity device 15. Therefor,time for holding a predetermined electric charge in the capacity device15, in other words, time necessary for writing a signal to the capacitydevice 15 may be shortened.

Then, by use of FIG. 6B, an operation of the source follower circuit inthe transient state in case of V_(out)>V_(in)−V_(b) will be described.

In FIG. 6B, at a time point of t=0, the voltage V_(gs1) between the gateand the source of the amplifying transistor 11 is of a smaller valuethan the threshold voltage of the amplifying transistor 11. Therefor,the amplifying transistor 11 is in a non-conductive state. Then,electric charges which were stored in the capacity device 15 flow in adirection of the ground electric potential V_(ss) through the biasingtransistor 12, and are finally discharged. At this time, since thevoltage V_(gs2) between the gate and the source of the biasingtransistor 12 is the same value as the bias electric potential V_(b), aelectric current flowing through the biasing transistor 12 becomes Ib.

Then, based upon the passage of time (t=T₁, t₁>0), the output electricpotential V_(out) is lessened, and the voltage V_(gs1) between the gateand the source of the amplifying transistor 11 is enlarged. Then, whenthe voltage V_(gs1) between the gate and the source of the amplifyingtransistor 11 becomes equal to the bias electric potential V_(b), itfalls in the steady state. At this time, the relation of the outputelectric potential V_(out), the input electric potential V_(in) and thebias electric potential V_(b) satisfies the above-described Equation(2). In addition, in the steady state, the output electric potentialV_(out) is maintained to be a constant value, and electric charges donot flow through the capacity device 15. Then, the electric current Ibflows through the amplifying transistor 11 and the biasing transistor12.

Summarizing the foregoing, in case of V_(out)>V_(in)−V_(b), time forholding a predetermined electric charge in the capacity device 15, inother words, time for writing a signal to the capacity device 15 isdependent upon the electric current I_(b) flowing through the biasingtransistor 12. Then, the electric current I_(b) is dependent upon thebias electric potential V_(b). Accordingly, in order to shorten the timefor writing the signal to the capacity device 15 by enlarging theelectric current I_(b), there occurs a necessity to enlarge the biaselectric potential V_(b).

In addition, as a method for compensating variation of a thresholdvoltage of a transistor, there is a method that the compensation iscarried out by viewing the variation by an output of a circuit to whicha signal was inputted and thereafter, by giving feed back of thevariation to an input side (e.g., see, Non-Patent Document 1).[Non-Patent Document 1] H. Sekine et al, “Amplifier Compensation Methodfor a Poly-Si TFT LCLV with an Integrated Data-Driver”, IDRC'97, p.45–48.

The operation of the above-described source follower circuit is carriedout on the assumption that characteristics of the amplifying transistor11 and the biasing transistor 12 are the same. However, as for the bothtransistors, overlapped are factors such as variations of gate length(L), gate width (W) and film thickness of a gate insulation film whichoccur due to difference of manufacturing processes and substrates usedand variations of crystalline states of channel forming areas and so onand thereby, there occurs a variation of threshold voltage and mobilityof the transistors.

For example, in FIG. 5A, it is assumed that the threshold voltage of theamplifying transistor 11 is 3V, and the threshold voltage of the biasingtransistor 12 is 4V, and a variation of 1V occurred. Then, in order toflow the electric current I_(b), there occurs a necessity that a voltagewhich is 1V lower than the voltage V_(gs2) between the gate and thesource of the biasing transistor 12 to the voltage V_(gs1) between thegate and the source of the amplifying transistor 11. In sum,V_(gs1)=V_(b)−1 is satisfied. Then,V_(out)=V_(in)−V_(gs1)=V_(in)−V_(b)+1 is satisfied. In sum, when thereoccurs a variation of even 1V in the threshold voltages of theamplifying transistor 11 and the biasing transistor 12, a variationoccurs also in the output electric potential V_(out).

SUMMARY OF THE INVENTION

This invention is one which was made in view of the above-describedproblems, and has an assignment to provide an electric circuit in whichaffect of a characteristic variation of a transistor was suppressed. Formore detail, it has an assignment to provide an electric circuit whichcan suppress the affect of the characteristic variation of thetransistor and can supply a desired voltage, in an electric circuithaving a function for amplifying an electric current.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention, together with further advantages thereof, may best beunderstood by reference to the following description taken inconjunction with the accompanying drawings in which:

FIG. 1A and FIG. 1B are views for explaining an operation of a sourcefollower circuits of the invention;

FIG. 2A and FIG. 2B are views for explaining the operation of the sourcefollower circuits of the invention;

FIG. 3A and FIG. 3B are views for explaining the operation of the sourcefollower circuits of the invention;

FIGS. 4A–E are views for explaining a structure of an electric circuitof the invention and its operation;

FIGS. 5A–C are views for explaining an operation of a source followercircuits;

FIG. 6A and FIG. 6B are views for explaining the operation of the sourcefollower circuits;

FIG. 7A and FIG. 7B are views for showing the source follower circuit ofthe invention;

FIG. 8 is a view for showing a differential amplifier of the invention;

FIG. 9 is a view for showing the differential amplifier of theinvention;

FIGS. 10A–B are views for showing an operational amplifier of theinvention;

FIG. 11A and FIG. 11B are views for showing the operational amplifier ofthe invention;

FIGS. 12A–C are views for showing a semiconductor apparatus of theinvention;

FIG. 13 is a view for showing pixels and a biasing circuit of thesemiconductor apparatus of the invention;

FIG. 14A and FIG. 14B are views for explaining a structure of anelectric circuit of the invention;

FIG. 15 is a view of a signal line drive circuit of the invention;

FIG. 16 is a view of the signal line drive circuit of the invention;

FIG. 17 is a view for explaining an operation of the signal line drivecircuit of the invention; and

FIGS. 18A–H are views of electric apparatuses to which the invention isapplied.

DETAILED DESCRIPTION OF THE INVENTION

This invention uses an electric circuit of a structure shown below, inorder to solve the above-described problems.

Firstly, a structure of an electric circuit which is used in theinvention will be described by use of FIGS. 4A and 4B. In FIGS. 4A and4B, reference numeral 2903 and 2913 designate devices having switchingfunctions, and preferably, a semiconductor device such as an analogswitch which is configured by a transistor etc. is used. The switches2903, 2913 are controlled by Signal 1 to be turned On or OFF. Inaddition, the switches 2903, 2913 are simple switches, and theirpolarity is not limited in particular.

Reference numeral 2902 and 2912 designates rectification type devices(rectifying device). The rectification type device means a device whichgenerates an electric current only in a single direction when anelectric potential difference was applied to electrodes at both ends ofthe device. As the rectification type device, a diode, a TFT in which agate and a drain are connected etc. are cited. In addition, in thisspecification, TFT in which the gate and the drain was connected isdescribed as a TFT of diode connection. Then, in FIGS. 4A and 4B, therectification type device 2902 is a p-channel type transistor of diodeconnection, and the rectification type device 2912 is a n-channel typetransistor of diode connection. Then, in the invention, an electriccircuit in which the rectification type device 2902 and the switch 2903shown in FIG. 4A were connected, or an electric circuit in which therectification type device 2912 and the switch 2913 shown in FIG. 4B wereconnected, is used.

Here, an operation of the electric circuit shown in FIGS. 4A and 4B willbe described by use of FIGS. 4C and 4D. In addition, FIG. 4C shows atiming chart of the Signal 1. Also, FIG. 4D shows a relation of avoltage between a gate and a source and time when electric potentials ofgates of the TFTs 2902 and 2912 are assumed to be V_(G2902), V_(G2912),respectively.

Here, it is assumed that a certain signal is inputted from one end ofthe electric circuit and a certain constant electric potential isapplied to the other end of the electric circuit. In case of theelectric circuit shown in FIG. 4A, it is assumed that the signal to beinputted is V_(x), the constant electric potential isV_(ss)(≦V_(x)−|V_(thP)|: V_(thP) means a threshold voltage of TFT 2902).In case of the electric circuit shown in FIG. 4B, it is assumed that thesignal to be inputted is V_(x) and the constant electric potential isV_(dd)(≦V_(x)+|V_(thN)|: V_(thN) means a threshold voltage of TFT 2912).

Firstly, in a period shown by (i), the switches 2903 and 2913 are turnedON. Then, in the electric circuit shown in FIG. 4A, electric potentialsof the drain region and the gate electrode of the transistor 2902 aredecreased. In the electric circuit shown in FIG. 4B, electric potentialsof the drain region and the gate electrode of the transistor 2912 areincreased. Since, as for the transistors 2902, 2912, a voltage betweenboth electrodes of each transistor exceeds an absolute value of thethreshold voltage, they are ON.

Then, in a period shown by (ii), the switches 2903, 2913 are turned OFF.Then, the drain electric potential of the TFT 2902 is increased, and thedrain electric potential of the TFT 2912 is decreased.

Later on, in a period shown by (iii), the voltage between the gate andthe source of the TFT 2902, 2912 becomes equal to its threshold voltageand both of the TFTs 2902, 2912 are turned OFF. At this time, a drainelectric potential of the TFT 2902, 2912 becomes V_(x)−|V_(thP)|,V_(x)+|V_(thN)|, respectively. That is, it means that, by the TFTs 2902,2912, an operation for adding there threshold voltage on the electricpotential V_(x) of the signal to be inputted is carried out.

As described above, this invention provides an electric circuit using arectification type device which generates an electric current only in asingle direction when an electric potential difference was applied toelectrodes at both end of the device. Then, the invention utilizes afact that, when a signal voltage is inputted to one terminal of therectification type device, an electric potential of the other terminalbecomes an electric potential offset only by the threshold voltage ofthe rectification type device.

In sum, even if a variation of the threshold voltage occurs between therectification type devices, the rectification type device can alwaysprovide an electric potential which was offset only by the thresholdvoltage of the rectification type device. Then, the invention canprovide an electric circuit in which affect of a variation of thethreshold voltage between the rectification type devices was suppressed,by using the rectification type device.

In addition, polarity of the TFTs 2902, 2912 is not limited inparticular. Also, in place of the TFTs 2902, 2912, as shown in FIG. 4E,diodes 2922, 2932 may be used respectively. As for the diodes 2922,2932, besides a diode having an ordinary PN junction, can use a diode ofa well-known structure.

In addition, in the invention, a transistor which used any material anda transistor which went through any means and manufacturing methods maybe used, and also, any types of transistors may be used. For example, athin film transistor (TFT) may be used. As the TFT, any semiconductorlayer of amorphous, polycrystalline, or single crystalline may be used.As other transistors, a transistor which was formed on a singlecrystalline substrate may be used, and a transistor which was formed ona SOI substrate may be used. Also, a transistor which was formed by anorganic material and a carbon nanotube may be used. Further, a MOS typetransistor may be used and a bipolar type transistor may be used.

(Embodiment Mode 1)

In this embodiment mode, as one example of an electric circuit of theinvention, a source follower circuit is shown and its structure andoperation will be described by use of FIGS. 1A to 3B.

Firstly, the structure of the source follower circuit will be describedby use of FIGS. 1A to 3B.

In FIGS. 1A to 3B, 411 designates an amplifying transistor, and 412designates a biasing transistor. 413 and 414 designates rectificationtype devices, and in this embodiment mode, transistors are used forthem. Then, it is assumed that a threshold voltage of the transistor 413is V_(th1) and a threshold voltage of the transistor 414 is V_(th2). 415and 416 designate devices having switching functions, and preferably,analog switches configured by transistors are used for them. Inaddition, the switches 415, 416 are simple switches, and its polarity isnot limited in particular.

In addition, polarity of the transistors 411 to the transistor 413 isnot limited in particular but, it is preferable that the transistor 411and the transistor 412, the transistor 411 and the transistor 413, thetransistor 412 and the transistor 414 have the same polarity. Then,FIGS. 1A and 1B and 2A show a source follower circuit in which thetransistor 411 to the transistor 414 are of n-channel type. Then, FIGS.2B and 3A–B show a case that the transistor 411 to the transistor 414are of p-channel type.

A drain region of the amplifying transistor 411 is connected to a powersupply line 419, and a source region thereof is connected to a powersupply line 420 through the transistor 412. A gate electrode of theamplifying transistor 411 is connected to a gate electrode and a drainregion of the transistor 413. In addition, hereinafter, the amplifyingtransistor 411 is identified as the transistor 411.

A drain region of the biasing transistor 412 is connected to the powersupply line 419 through the transistor 411, and a source region thereofis connected to the power supply line 420. A gate electrode of thebiasing transistor 412 is connected to a gate electrode and a drainregion of the transistor 414. In addition, hereinafter, the biasingtransistor 412 is identified as the transistor 412.

The switches 415, 416 are controlled by a signal which is inputted to beturned ON or OFF. However, for the purpose of simplifying descriptions,an signal line etc. for inputting a signal to the switches 415, 416 areomitted and not shown in the drawings.

Then, in the source follower circuit shown in FIGS. 1A to 3B, an inputelectric potential V_(in) is inputted to the source region of thetransistor 413. Also, a bias electric potential is inputted to thesource region of the transistor 414. Then, an electric potential of thesource region of the transistor 411 becomes an output electric potentialV_(out).

Reference numeral 417 to 420 designate power supply lines, and a powersupply electric potential V_(dd1) is applied to the power supply line417, and a power supply electric potential V_(dd2) is applied to thepower supply line 418. Also, a power supply electric potential V_(dd3)is applied to the power supply line 419, and a ground electric potentialV_(ss) is applied to the power supply line 420. In addition, there is anecessity that the power supply electric potential V_(dd1) and the powersupply electric potential V_(dd2) satisfy the following conditions.

Firstly, as shown in FIGS. 1A, 1B and 2A, in case that the transistor411 to the transistor 413 are of n-channel type, there is a necessitythat the power supply electric potential V_(dd1) is an electricpotential which is more than an added value of the input electricpotential V_(in) and the threshold voltage V_(th1) of the transistor413. At this time, the following equation (4) is satisfied.V _(dd1)≧(V _(in) +V _(th1))  (4)

In the same manner, there is a necessity that the power supply electricpotential V_(dd2) is an electric potential which is more than an addedvalue of the bias electric potential V_(b) and the threshold voltageV_(th2) of the transistor 414. At this time, the following equation (5)is satisfied.V _(dd2)≧(V _(b) +V _(th2))  (5)

Further, as shown in FIGS. 2B and 3A–B, in case that the transistor 411to the transistor 413 are of p-channel type, there is a necessity thatthe power supply electric potential V_(dd1) is an electric potentialwhich is less than a value obtained by subtracting an absolute value ofthe threshold voltage V_(th1) of the transistor 413 from the inputelectric potential V_(in). At this time, the following equation (6) issatisfied.V _(dd1)≦(V _(in) −|V _(th1)|)  (6)

In the same manner, there is a necessity that the power supply electricpotential V_(dd2) is an electric potential which is less than a valueobtained by subtracting an absolute value of the threshold voltageV_(th2) of the transistor 414 from the bias electric potential V_(b). Atthis time, the following equation (7) is satisfied.V _(dd2)≦(V _(b) −|V _(th2)|)  (7)

In addition, one common power supply line may be used for the powersupply line 417 to the power supply line 419. However, at that time, itis necessary to apply an electric potential which satisfies theEquations (4) and (5). In the same manner, it is necessary to apply anelectric potential which satisfies the Equations (6) and (7).

Subsequently, an operation of the source follower circuit shown in FIGS.1A to 3B will be described. Firstly, a case that the transistor 411 tothe transistor 413 are of n-channel type will be described by use ofFIGS. 1A, 1B and 2A. Then, a case that the transistor 411 to thetransistor 413 are of p-channel type will be described by use of FIGS.2B, 3A and 3B.

In FIG. 1A, the input electric potential V_(in) is applied to the sourceregion of the transistor 413, and also, the bias electric potentialV_(b) is applied to the source region of the transistor 414. Then, theswitches 415, 416 are turned ON. Then, there occurs an electricpotential difference at the power supply line 417 and the source regionof the transistor 413, an electric current flows. In the same manner,there occurs an electric potential difference at the power supply line418 through the source region of the transistor 414, and an electriccurrent flows. At this time, an electric potential of the gate electrodeof the transistor 413 becomes the same value as the power supplyelectric potential V_(dd1), and an electric potential of the gateelectrode of the transistor 414 becomes the same value as the powersupply electric potential V_(dd2).

Then, the switches 415, 416 are turned OFF (FIG. 1B). Then, electricpotentials of the drain regions of the transistors 413, 414 aredecreased. Later on, voltages between the gates and the sources of thetransistors 413, 414 becomes equal to the threshold voltages V_(th1),V_(th2) of the transistors 413, 414. As a result, the transistors 413,414 are turned OFF together.

At this time, the drain electric potential of the transistor 413 isV_(in)+V_(th1). Also, the drain electric potential of the transistor 414is V_(b)+V_(th2) (FIG. 2A). Then, an electric potential of the sourceregion of the transistor 411 becomes V_(out). The output electricpotential V_(out) is calculated by the following equations (8) to (15).

When the transistor operates in the saturation state, the followingequation (8) is satisfied. I_(ds) designates an amount of an electriccurrent which flows through a channel forming area of a transistor, andV_(gs) designates a voltage between a gate and a source of a transistor.Also, V_(th) designates a threshold voltage of a transistor.I_(ds)∝(V_(gs)−V_(th))²  (8)

In the above equation (8), assuming V_(k)=V_(gs)−V_(th), the followingequation (9) is satisfied.I_(ds)∝V_(k) ²  (9)

It is known from the equation (9) that I_(ds) is in proportion to thesecond power of V_(k) which is a value obtained by subtracting a valueof V_(th) from V_(gs). Here, by applying the above-described equations(8) and (9) to the transistors 411, 412, the output electric potentialV_(out) is calculated. Firstly, assuming that a voltage applied to thegate electrode of the transistor 412 is V_(a2), the following equation(10) is satisfied.V _(a2) =V _(b) +V _(th2)  (10)

Then, it is assumed that the threshold voltages of the transistors 412and 414 are the same. Then, assuming that a value obtained bysubtracting the threshold voltage V_(th2) from the voltage V_(a2) whichwas applied to the gate electrode of the transistor 412 is V_(k2), thefollowing equation (11) is satisfied.V _(k2) =V _(a2) −V _(th2)=(V _(b) +V _(th2))−V _(th2) =V _(b)  (11)

Also, assuming that a voltage applied to the gate electrode of thetransistor 411 is V_(a1), the following equation (12) is satisfied.V _(a1) =V _(in) +V _(th1)  (12)

It is assumed that the threshold voltages of the transistors 413 and 411are the same. Then, assuming that a value obtained by subtracting thethreshold voltage V_(th1) from the voltage V_(gs1) between the gate andthe source of the transistor 411 is V_(k1), the following equation (13)is satisfied.V _(k1) =V _(gs1) −V _(th1)  (13)

Here, considering that electric currents of the same amount flow throughthe transistors 411, 412, the following equation (14) is satisfied. Inaddition, in this embodiment mode, for the purpose of simplicity, it isassumed that the transistors 411 and 412 have the same size such as gatewidths, gate lengths etc.V_(k1)=V_(k2)=V_(b)  (14)

Then, since the output electric potential V_(out) is an electricpotential of the source region of the transistor 211, the followingequation (15) is satisfied.V _(out) =V _(a1) −V _(gs1)=(V _(in) +V _(th1))−(V _(b) +V _(th1))=V_(in) −V _(b)  (15)

As shown in the equation (15), the output electric potential V_(out)becomes a value obtained by subtracting the bias electric potentialV_(b) from the input electric potential V_(in), and is not dependentupon the threshold voltage. Therefor, even if there occurs a variationof the threshold voltages of the transistors 411, 415, it is possible tosuppress an affect to the output electric potential V_(out).

Then, the case that the transistors 411 to 413 are of p-channel typewill be described by use of FIGS. 2B and 3.

In FIG. 2B, the input electric potential V_(in) is applied to the sourceregion of the transistor 413, and also, the bias electric potentialV_(b) is applied to the source region of the transistor 414. Then, theswitches 415, 416 are turned ON. Then, there occurs an electricpotential difference at the source region of the transistor 413 and thepower supply line 417, and an electric current flows. In the samemanner, there occurs an electric potential difference at the sourceregion of the transistor 414 and the power supply line 418, and anelectric current flows. Then, an electric potential of the gateelectrode of the transistor 413 becomes the same value as the powersupply electric potential V_(dd1), and an electric potential of the gateelectrode of the transistor 414 becomes the same value as the powersupply electric potential V_(dd2).

Then, the switches 415, 416 are turned OFF (FIG. 3A). Then, electricpotentials of the drain regions of the transistors 413, 414 areincreased. Later on, voltages between gates and sources of thetransistors 413, 414 become equal to the threshold voltages V_(th1),V_(th2) of the transistors 413, 414. As a result, the transistors 413,414 are turned OFF together.

At this time, the drain electric potential of the transistor 413 is(V_(in)−|V_(th1)|). Also, the drain electric potential of the transistor414 is (V_(b)−|V_(th2)|) (FIG. 3B). Then, an electric potential of thesource region of the transistor 411 becomes the output electricpotential. The output electric potential is calculated by the followingequations (16) to (21)

Firstly, in reference to the above equations (8), (9), assuming that avoltage applied to the gate electrode of the transistor 412 is V_(a2),the following equation (16) is satisfied.V _(a2) =V _(b) −|V _(th2)|  (16)

Further, assuming that a value obtained by subtracting the thresholdvoltage V_(th2) from the voltage V_(a2) applied to the gate electrode ofthe transistor 412 is V_(k2), the following equation (17) is satisfied.V _(k2) =V _(a2) −V _(th2)=(V _(b) −|V _(th2)|)−|V _(th2) |=V _(b)  (17)

Also, assuming that a voltage applied to the gate electrode of thetransistor 411 is V_(a1), the following equation (18) is satisfied.V _(a1) =V _(in) −|V _(th1)|  (18)

Further, assuming that a value obtained by subtracting the thresholdvoltage V_(th1) from the voltage V_(gs1) between the gate and the sourceof the transistor 411 is V_(k1), the following equation (19) issatisfied.V _(k1) =V _(gs1) −|V _(th1)|  (19)

Here, considering that electric currents of the same amount flow throughthe transistors 411, 412, the following equation (20) is satisfied.V_(k1)=V_(k2)=V_(b)  (20)

Then, since the output electric potential V_(out) is an electricpotential of the source region of the transistor 211, the followingequation (21) is satisfied.V _(out) =V _(a1) −V _(gs1)=(V _(in) +V _(th1))−(V _(b) +V _(th1))=V_(in) −V _(b)  (21)

As shown in the equation (21), the output electric potential V_(out)becomes a value obtained by subtracting the bias electric potentialV_(b) from the input electric potential V_(in), and is not dependentupon the threshold voltage. Therefor, even if there occurs a variationof the threshold voltages of the transistors 411, 415, it is possible tosuppress an affect to the output electric potential V_(out).

Also, FIG. 7A shows a source follower circuit of such a case that thetransistors 412, 414, the switch 416 and the power supply line 418 arenot disposed, in the source follower circuit shown in FIGS. 1A–B and 2A.In addition, in the electric circuit shown in FIG. 7A, a switch 423 isadditionally disposed between the power supply line 420 and the sourceregion of the transistor 411. Since an operation of the source followercircuit shown in FIG. 7A is the same as the operation of the sourcefollower circuit shown in the above described FIGS. 1A–B and 2A, itsdescription is omitted in this embodiment mode.

Further, FIG. 7B shows a source follower circuit of such a case that thetransistors 412, 414, the switch 416 and the power supply line 418 arenot disposed, in the source follower circuit shown in FIGS. 2B and 3A–B.In addition, since an operation of the source follower circuit shown inFIG. 7B is the same as the operation of the source follower circuitshown in the above described FIGS. 2B and 3, its description is omittedin this embodiment mode.

In addition, in this specification, an operation for giving apredetermined electric charge to the rectification type device is calledas a setting operation. In this embodiment mode, the operation shown inFIG. 1A and the operation shown in FIG. 2B correspond to the settingoperation. An operation for inputting the input electric potentialV_(in) and taking out the output electric potential V_(out) is called asan output operation. In this embodiment mode, the operation shown inFIGS. 1B and 2A and the operation shown in FIGS. 3A and 3B correspond tothe output operation.

As described above, this invention provides an electric circuit whichused the rectification type device through which an electric currentflows only in a single direction, when an electric potential differencewas applied to electrodes at both end of the device. Then, thisinvention utilizes a fact that, when a signal electric voltage wasapplied to one terminal of the rectification type device, an electricpotential of the other terminal becomes an electric potential offset byonly the threshold voltage of the rectification type device.

In sum, even if there occurs a variation of the threshold voltagesbetween the rectification type devices, the rectification type devicecan always provide an electric potential offset by only the thresholdvoltage of the rectification type device. This invention, by using theabove-described rectification type device, can provide an electriccircuit in which an affect of a variation of the threshold voltagesbetween the rectification type devices was suppressed. Then, to suppressan affect of a variation of the threshold voltages between therectification type devices corresponds to that it is possible to providean electric circuit in which an affect of a variation of the thresholdvoltages between the rectification type devices was suppressed.

(Embodiment Mode 2)

In the above-described Embodiment Mode 1, the source follower circuit towhich this invention was applied was described. However, this inventioncan be applied to various circuits such as an arithmetic circuit etc. asrepresented by a differential amplifier, an sense amplifier, anoperational amplifier etc. In this embodiment mode, an arithmeticcircuit to which the invention was applied will be described by use ofFIGS. 8 to 11B.

Firstly, a differential amplifier to which the invention was appliedwill be described by use of FIG. 8. The differential amplifier carriesout a calculation of a difference of an input electric potential V_(in1)and an input electric potential V_(in2), and outputs the output electricpotential V_(out).

In the differential amplifier shown in FIG. 8, reference numeral 272 and273 designate p-channel type transistors, and reference numeral 274 to276 designate n-channel type transistors. Reference numeral 277 to 279designate rectification type devices, and in this embodiment mode,n-channel type transistors are used for them. Also, Reference numeral280 to 282 designate devices having switching functions, and areindicated as switches. For the switches 280 to 282, preferably,semiconductor devices such as transistors etc. are used. In addition,the switches 280 to 282 are simple switches, and its polarity is notlimited in particular.

A drain region of the transistor 272 is connected to a power supply line285, and a source region thereof is connected to a drain region of thetransistor 274. A drain region of the transistor 273 is connected to apower supply line 285, and a source region thereof is connected to adrain region of the transistor 275. A gate electrode of the transistor272 and a gate electrode of the transistor 273 are connected. Inaddition, instead of the transistors 272 and 273, resistors may bedisposed.

The drain region of the transistor 274 is connected to the power supplyline 285 through the transistor 272, and the source region thereof isconnected to a power supply line 289 through the transistor 276. A gateelectrode of the transistor 274 is connected to a gate electrode of thetransistor 277.

The drain region of the transistor 275 is connected to the power supplyline 285 through the transistor 273, and the source region thereof isconnected to the power supply line 289 through the transistor 276. Agate electrode of the transistor 275 is connected to a gate electrode ofthe transistor 278.

The drain region of the transistor 276 is connected to the source regionof the transistor 274 and the source region of the transistor 275. Thesource region of the transistor 276 is connected to the power supplyline 289, and the gate electrode thereof is connected to a gateelectrode of the transistor 279.

In the differential amplifier shown in FIG. 8, the input electricpotential V_(in1) is inputted to the source region of the transistor277, and the input electric potential V_(in2) is inputted to the sourceregion of the transistor 278. Also, the bias electric potential V_(b) isinputted to the source region of the transistor 279. Then, an electricpotential of the drain region of the transistor 275 becomes the outputelectric potential V_(out).

Reference numeral 285 to 289 designates power supply lines, and thepower supply electric potential V_(dd1) is applied to the power supplyline 285, and the power supply electric potential V_(dd2) is applied tothe power supply line 286. Also, a power supply electric potentialV_(dd3) is applied to the power supply line 287, and a power supplyelectric potential V_(dd4) is applied to the power supply line 288.Also, the ground electric potential V_(ss) is applied to the powersupply line 289. Here, assuming that a threshold voltage of thetransistor 277 is V_(th277), and a threshold voltage of the transistor278 is V_(th278), and a threshold voltage of the transistor 279 isV_(th279), it becomes necessary that respective power supply electricpotentials V_(dd2) to V_(dd4) satisfy the following equations (22) to(24).V _(dd2)≧(V _(in1) +V _(th277))  (22)V _(dd3)≧(V _(in2) +V _(th278))  (23)V _(dd4)≧(V _(b) +V _(th279))  (24)

In addition, one common power supply line may be used for the powersupply lines 285 to 288. However, it is necessary to apply an electricpotential which satisfies the equations (22) to (24). Also, since adescription of an operation of the differential amplifier shown in FIG.8 accords to the above-described Embodiment Mode 1, it is omitted inthis embodiment mode.

Subsequently, a case that a transistor configuring the differentialamplifier shown in FIG. 8 has a reverse conductivity type will bedescribed by use of FIG. 9.

In the differential amplifier shown in FIG. 9, Reference numeral 272 and273 designate n-channel type transistors, and reference numeral 274 to276 designates p-channel type transistors. Reference numeral 277 to 279designate rectification type devices, and in this embodiment mode,p-channel type transistors are used for them. Also, reference numeral280 to 282 designate switches. In addition, since a relation ofconnections of the transistors 272 to 279 is the same as theabove-described differential amplifier shown in FIG. 8, its descriptionis omitted here.

Reference numeral 285 to 289 designates power supply lines, and thepower supply electric potential V_(dd1) is applied to the power supplyline 285, and the power supply electric potential V_(dd2) is applied tothe power supply line 286. Also, a power supply electric potentialV_(dd3) is applied to the power supply line 287, and a power supplyelectric potential V_(dd4) is applied to the power supply line 288.Also, the ground electric potential V_(ss) is applied to the powersupply line 289. Here, assuming that a threshold voltage of thetransistor 277 is V_(th277), and a threshold voltage of the transistor278 is V_(th278), and a threshold voltage of the transistor 279 isV_(th279), it becomes necessary that respective power supply electricpotentials V_(dd2) to V_(dd4) satisfy the following equations (25) to(27).V _(dd2)≦(V _(in1) −|V _(th277)|)  (25)V _(dd3)≦(V _(in2) −|V _(th278)|)  (26)V _(dd4)≦(V _(b) −|V _(th279)|)  (27)

In addition, one common power supply line may be used for the powersupply lines 285 to 288. However, it is necessary to apply an electricpotential which satisfies the equations (25) to (27). Also, since adescription of an operation of the differential amplifier shown in FIG.9 accords to the above-described Embodiment Mode 1, it is omitted inthis embodiment mode.

Also, in this embodiment mode, the electric circuit shown in FIGS. 8 and9 was indicated as the differential amplifier but, this invention is notlimited to this, and can be used as another arithmetic circuit such as asense amplifier etc. by changing a voltage which is inputted as theinput electric potential V_(in1) and the input electric potentialV_(in2) at pleasure.

Then, an operational amplifier to which this invention was applied willbe described by use of FIGS. 10A–B and 11A–B. FIG. 10A shows circuitsigns of the operational amplifier, and FIG. 10B shows a circuitstructure of the operational amplifier.

In addition, there are various circuit structures of the operationalamplifier. Then, in FIGS. 12A–C, a case that the differential amplifierwas combined with the source follower circuit as the simplest case willbe described. Thereby, a circuit structure of the operational amplifieris not limited to the structure of FIGS. 12A–C.

In the operational amplifier, a characteristic is defined by a relationof the input electric potential V_(in1) and the input electric potentialV_(in2), and the output electric potential V_(out). For more detail, theoperational amplifier has a function for multiplying a voltage of adifference of the input electric potential V_(in1) and the inputelectric potential V_(in2) with amplification A and for outputting theoutput electric potential V_(out).

In the operational amplifier shown in FIG. 10B, the input electricpotential V_(in1) is inputted to the source region of the transistor277, and the input electric potential V_(in2) is inputted to the sourceregion of the transistor 278. Also, the bias electric potential V_(b) isinputted to the source region of the transistors 279, 414. Then, anelectric potential of the source region of the transistor 411 becomesthe output electric potential V_(out).

In the circuit shown in FIG. 10B, a portion surrounded by a dotted lineindicated by 305 is the same structure as the differential amplifiershown in FIG. 8. Also, a portion surrounded by a dotted line indicatedby 306 is the same structure as the source follower circuit shown inFIGS. 1A and B. Therefor, a detailed description of a structure of theoperational amplifier shown in FIG. 10B is omitted. However, it isnecessary that respective power supply electric potentials to be appliedto the power supply lines 286 to 288 satisfy the above-describedequations (22) to (24). Also, it is necessary that respective powersupply electric potentials to be applied to the power supply lines 417,418 satisfy the above-described equations (4) and (5). In addition, inthis embodiment mode, the input electric potential V_(in) in theabove-described equation (4) corresponds to an electric potential of thedrain region of the transistor 275.

Also, FIGS. 11A–B show an operational amplifier of a case that thetransistor 412 is of p-channel type. A structure shown in FIG. 11B isthe same as the operational amplifier shown in FIG. 10B, except for apoint that the drain region of the transistor 414 is connected to thedrain region of the transistor 413. Therefor, a detailed description ofa structure of an amplifier shown in FIG. 11B is omitted. However, thereis a necessity that respective power supply electric potentials to beapplied to the power supply lines 286 to 288 satisfy the above-describedequations (22) to (24). Also, there is a necessity that the power supplyelectric potential to be applied to the power supply line 417 satisfiesthe above-described equation (4). In addition, in this embodiment mode,the input electric potential V_(in) in the above-described equation (4)corresponds to an electric potential of the drain region of thetransistor 275. Further, there is a necessity that a power supplyelectric potential to be applied to the power supply line 418 satisfiesthe following equation (28).V _(dd6)≦(V _(in) −|V _(th414)|)  (28)

As just described, this invention provides an electric circuit whichused a rectification type device through which an electric current flowsin a single direction, when an electric potential difference was appliedto electrodes at both ends of the device. Then, this invention utilizesa fact that, when a signal voltage is inputted to one terminal of therectification type device, an electric potential of the other terminalbecomes an electric potential offset only by the threshold voltage ofthe rectification type device.

In sum, even if a variation of the threshold voltage occurs between therectification type devices, the rectification type device can alwaysprovide an electric potential which was offset only by the thresholdvoltage of the rectification type device. The invention can provide anelectric circuit in which affect of a variation of the threshold voltagebetween the rectification type devices was suppressed, by using therectification type device. Then, to suppress an affect of a variation ofthe threshold voltages between the rectification type devicescorresponds to that it is possible to provide an electric circuit inwhich an affect of a variation of the threshold voltages between thetransistors was suppressed.

In addition, it is possible to arbitrarily combine this embodiment modewith the

Embodiment mode 1.

(Embodiment Mode 3)

In this embodiment mode, a structure and its operation of asemiconductor apparatus having a photoelectric transducer device towhich the invention was applied will be described by use of FIGS. 12A–Cand 13.

The semiconductor apparatus shown in FIG. 12A has a pixel part 702 inwhich a plurality of pixels are disposed in a matrix shape, on asubstrate 701, and has a signal line drive circuit 703 and first tofourth scanning line drive circuits 704 to 707, on the periphery of thepixel part 702. The semiconductor apparatus shown in FIG. 12A has thesignal line drive circuit 703 and the four sets of scanning line drivecircuits 704 to 707 but, this invention is not limited to this, and itis possible to dispose the arbitrary number of the signal line drivecircuit and the scanning line drive circuit in compliance with astructure of pixels. Also, a signal is applied from outside to thesignal line drive circuit 703 and the first to fourth scanning linedrive circuits 704 to 707 through FPC 708. However, this invention isnot limited to this, and the electric circuit except for the pixel part702 may be supplied from outside by use of IC etc.

Firstly, structures of the first scanning line drive circuit 704 and thesecond scanning line drive circuit 705 will be described by use of FIG.12B. Since the third scanning line drive circuit 706 and the fourthscanning line drive circuit 707 accord to the figure of FIG. 12B,showing in the figure is omitted.

The first scanning line drive circuit 704 has a shift register 709 and abuffer 710. The second scanning line drive circuit 705 has a shiftregister 711 and a buffer 712. Describing an operation briefly, theshift registers 709, 711 output sampling pulses sequentially, accordingto a clock signal (G-CLK), a start pulse (SP) and a clock inversionsignal (G-CLKb). Thereafter, the sampling pulsed amplified by thebuffers 710, 712 are inputted to scanning lines and have them fallen ina selection state one line by one line.

In addition, it is fine to form such a structure that, between the shiftregister 709 and the buffer 710, or between the shift register 711 andthe buffer 712, a level shifter circuit was disposed. It is possible toenlarge an amplitude of a voltage, by disposing the level shiftercircuit.

Then, a structure of the signal line drive circuit 703 will be describedby use of FIG. 12C.

The signal line drive circuit 703 has a drive circuit 715 for a signaloutput line, a sample-and-hold circuit 716, a bias circuit 714 and anamplifier circuit 717. The bias circuit 714 forms a source followercircuit, by making a pair with an amplifying transistor of each pixel.The sample-and-hold circuit 716 has a function for temporarily storing asignal, for carrying out an analog to digital conversion, and forreducing noises. The drive circuit 715 for a signal output has afunction for outputting a signal for outputting sequentially signalswhich were stored temporarily. Then, the amplifier circuit 717 has acircuit for amplifying a signal which was outputted from thesample-and-hold circuit 716 and the drive circuit 715 for the signaloutput. In addition, the amplifier circuit 717 may not be disposed incase that there is no necessity to amplify a signal.

Then, in the pixel part 702, structures and operations of a circuit ofthe pixel 713 which is disposed at i-th column and j-th row and the biascircuit 714 on the periphery of the i-th column will be described by useof FIG. 13.

Initially, structures of the circuit of the pixel 713 which is disposedat i-th column and j-th row and the bias circuit 714 on the periphery ofthe i-th column will be described.

The pixel 713 shown in FIG. 13 has first to fourth scanning linesG_(a)(j) to G_(d)(j), a signal line S(i), a first power supply lineV_(a)(i), and a second power supply line V_(c)(i). Also, it hasn-channel type transistors 254, 255, a photoelectric transducer device257, and switches 250 to 253. The transistor 254 is of a diodeconnection, and corresponds to the rectification type device.

The bias circuit 714 has n-channel type transistors 256, 257, and aswitch 258. The transistor 257 is of a diode connection, and correspondsto the rectification type device.

In this embodiment mode, the transistor 255 is of n-channel type but,this invention is not limited to this, and a p-channel type may be usedfor the same. However, since a source follower circuit is formed by thetransistors 255 and 260, it is preferable that the both transistors havethe same polarity.

The switches 250 to 254 and 258 are semiconductor devices havingswitching functions, and preferably, transistors are used for them. Theswitch 251 is controlled by a signal which is inputted from the firstscanning line G_(a)(j) to be turned ON or OFF. The switch 250 iscontrolled by a signal which is inputted from the second scanning lineG_(b)(j) to be turned ON or OFF. The switch 252 is controlled by asignal which is inputted from the third scanning line G_(c)(j) to beturned ON or OFF. The switch 253 is controlled by a signal which isinputted from the fourth scanning line G_(d)(j) to be turned ON or OFF.Also, the switch 258 is controlled by a signal which is inputted to beturned ON or OFF. However, for the purpose of simplifying thedescription, showing the signal line for inputting a signal to theswitch 258 in the figure is omitted.

In the pixel 713, as for the source region and the drain region of thetransistor 255, one is connected to the first power supply lineV_(a)(i), and the other is connected to the signal line S(i) through theswitch 250. The gate electrode of the transistor 255 is connected to thedrain region and the gate electrode of the transistor 254. One terminalof the photoelectric transducer device 257 is connected to the sourceregion of the transistor 254 through the switch 252. The other terminalof the photoelectric transducer device 257 is connected to the powersupply line 258. The ground electric potential V_(ss) is applied to thepower supply line 258.

Also, in the bias circuit 714, the drain region of the transistor 256 isconnected to the signal line S(i), and the source region thereof isconnected to the power supply line 260. The ground electric potentialV_(ss) is applied to the power supply line 260. Also, the gate electrodeof the transistor 256 is connected to the gate electrode and the drainregion of the transistor 257, and connected to the power supply line 259through the switch 258. The ground electric potential V_(dd) is appliedto the power supply line 259. Also, the bias electric potential V_(b) isapplied to the source region of the transistor 257.

Then, in FIG. 13, a portion surrounded by a dotted line indicated byreference numeral 719 and a portion surrounded by a dotted lineindicated by 714 correspond to the source follower circuit shown inFIGS. 1A and 1B. At this time, there is a necessity that an electricpotential of the second power supply line V_(c)(i) satisfies thefollowing equation (29). In addition, in the equation (29), V_(pd) meansan electric potential of a signal which is read out from thephotoelectric transducer device 257, and V_(th254) means a thresholdvoltage of the transistor 254.V _(c)≧(V _(pd) +V _(th254))  (29)

In the same manner, there is a necessity that the electric potentialV_(dd) of the power supply line 259 satisfies the following equation(30). In addition, in the equation (30), V_(th257) means a thresholdvoltage of the transistor 257.V _(dd)≧(V _(b) +V _(th257))  (30)

In addition, the above-described equations (29) and (30) are satisfiedin case that the transistors 254, 255, 256, and 257 are of n-channeltype. Here, in case that the transistors 254, 255, 256, and 257 are ofp-channel type, the following equations (31) and (32) are satisfied.V _(c)≦(V _(pd) −|V _(th254)|)  (31)V _(dd)≦(V _(b) −|V _(th257)|)  (32)

Then, operations of the circuit of the pixel 713 disposed at the i-thcolumn and the j-th row and the bias circuit 714 on the periphery of thei-th column will be briefly described.

Firstly, in the pixel 713, the switch 251 is turned ON. Then, otherswitches than the same are turned OFF. Then, an electric potential ofthe second power supply line V_(c)(i) and electric potentials of thegate electrodes of the transistors 254, 255 become the same. As aresult, the transistors 254, 255 are turned ON.

In the same manner, in the bias circuit 714, the switch 258 is turnedON. Then, the power supply electric potential V_(dd) of the power supplyline 259 and electric potentials of the gate electrodes of thetransistors 256, 257 become the same. As a result, the transistors 256,257 are turned ON.

Then, the switch 252 is turned ON. At this time, the switches 251, 258are ON and other switches than them are maintained to be OFF. At thistime, an electric potential of a signal which is read out from thephotoelectric transducer device 257 designates V_(pd).

Subsequently, in the pixel 713, the switch 251 is turned OFF. Then, thedrain electric potential of the transistor 254 is decreased. Then, avoltage between the gate and the source of the transistor 254 becomesequal to a threshold voltage of the transistor 254, and the transistor254 is turned OFF. At this time, the drain electric potential of thetransistor 254 becomes V_(pd)+V_(th254). In sum, it means that anoperation for adding the threshold voltage V_(th254) of the transistor254 to the electric potential V_(pd) of the signal to be inputted wascarried out. In addition, it is fine that the switch 252 is turned fromON to OFF, after the transistor 254 was turned OFF.

In the same manner, in the bias circuit 714, the switch 258 is turnedOFF. Then, the drain electric potential of the transistor 257 isdecreased. Then, a voltage between the gate and the source of thetransistor 257 becomes equal to a threshold voltage of the transistor257, and the transistor 257 is turned OFF. At this time, the drainelectric potential of transistor 257 become V_(b)+V_(th257). In sum, itmeans that an operation for adding the threshold voltage V_(th257) ofthe transistor 257 to the electric potential V_(b) of a signal which isinputted was carried out.

Then, the switch 250 is turned ON. Then, other switches than the same isturned OFF. Then, an electric potential of the source region of thetransistor 255 becomes the output electric potential V_(out), and theoutput electric potential V_(out) is outputted to the signal line S(i)through the switch 250, as a signal which was read out by thephotoelectric transducer device 257.

Subsequently, the switch 253 is turned ON and other switches than it areall turned OFF. Then, the photoelectric transducer device 257 isinitialized. For more detail, in order to realize such a situation thatan electric potential of a n-channel side terminal of the photoelectrictransducer device 257 becomes the same as an electric potential of thepower supply line 258, it is arranged so that electric charges which areheld by the photoelectric transducer device 257 flow in a direction ofthe power supply line V(i) through the switch 254. After that, theabove-described operation is repeated.

As described above, this invention provides an electric circuit whichused the rectification type device in which an electric current isgenerated only in a single direction, when an electric potentialdifference was applied to electrodes at both ends of the device. Then,the invention utilizes a fact that, when a signal voltage is inputted toone terminal of the rectification type device, an electric potential ofthe other terminal becomes an electric potential offset only by thethreshold voltage of the rectification type device.

In sum, even if a variation of the threshold voltage occurs between therectification type devices, the rectification type device can alwaysprovide an electric potential which was offset only by the thresholdvoltage of the rectification type device. The invention can provide anelectric circuit in which affect of a variation of the threshold voltagebetween the rectification type devices was suppressed, by using therectification type device. Then, to suppress an affect of a variation ofthe threshold voltages between the rectification type devicescorresponds to that it is possible to provide an electric circuit inwhich an affect of a variation of the threshold voltages betweentransistors was suppressed.

As for this invention, It is possible to arbitrarily combine theEmbodiments mode 1 to 3.

(Embodiment Mode 4)

In this embodiment mode, an example of an electric circuit to which theinvention was applied which is different from the Embodiments mode 2 and3 will be described by use of FIGS. 14A to 17.

In FIG. 14A, reference numeral 310 is of a structure in which switches421, 422 are added to the source follower circuit shown in FIGS. 1A, 1Band 2A. Since a circuit structure and an operation of the sourcefollower circuit 310 are the same as FIGS. 1A, 1B and 2A, itsdescription is omitted in this embodiment mode.

It was described that the operation of the source follower circuit 310can be roughly divided into the setting operation and the outputoperation. In addition, the setting operation means an operation forgiving a predetermined electric charge to the rectification type device,and corresponds to the operation shown in FIG. 1A. Also, the outputoperation means an operation for inputting the input electric potentialV_(in) and for taking out the output electric potential V_(out), andcorresponds to the operation shown in FIGS. 1B and 2A.

In the source follower circuit 310, a terminal a corresponds to an inputterminal, and a terminal b corresponds to an output terminal. Then, theswitches 415, 416 are controlled by a signal which is inputted from aterminal c. The switches 421, 422 are controlled by a signal which isinputted from a terminal d.

In addition, the circuit shown in FIGS. 1A–B and 2A was applied to thisembodiment mode but, the circuit shown in FIG. 2B and FIGS. 7A and 7Bmay be used for it.

Then, when an electric circuit having the source follower circuit 310 isdesigned, as shown in FIG. 14B, it is fine to disposed at least twosource follower circuits 315, 316. Then, it is fine that, out of thesource follower circuits 315, 316, one carries out the setting operationand the other carries out the output operation. By doing this, since itis possible to do two things at the same time, and the operation doesnot have any waste, and there is no necessity of wasteful time, it ispossible to carry out the operation of the electric circuit at highspeed.

For example, when the signal line drive circuit is designed by use ofthe source follower circuit, it is fine to dispose at least two sourcefollower circuits with respect to each signal line. Also, when thescanning line drive circuit is designed by use of the source followercircuit, it is fine to dispose at least two source follower circuitswith respect to each scanning line. Also, when the pixel is designed byuse of the source follower circuit, it is fine to dispose at least twosource follower circuits with respect to each pixel.

Also, in FIG. 14B, reference numeral 311 to 314 designate switches. Whenthe switches 311, 312 are ON, the switches 313, 314 are turned OFF. Whenthe switches 311, 312 are OFF, the switches 313, 314 are turned ON. Bydoing this, it is arranged that, out of the two source follower circuits315, 316, one carries out the setting operation, and the other carriesout the output operation. In addition, without disposing the switches311 to 314, the two source follower circuits 315, 316 may be controlledby controlling the switches 421, 422 that the source follower circuit310 has.

Also, in this embodiment mode, portions 315, 316 surrounded by dotedlines correspond to the source follower circuits but, this invention isnot limited to this, and the differential amplifier and the operationalamplifier etc. shown in FIGS. 8 to 11B etc. may be applied to it.

Then, in this embodiment mode, a structure and its operation of a signalline drive circuit in which at least two source follower circuits weredisposed with respect to each signal line will be described by use ofFIGS. 15 to 17.

FIG. 15 shows the signal line drive circuit, and the signal line drivecircuit has a shift register 321, a first latch circuit 322, a secondlatch circuit 323, a D/A converter circuit 324 and a signal amplifiercircuit 325.

In addition, in case that the first latch circuit 322 and the secondlatch circuit 323 are circuits which can store analog data, there aremany cases that the D/A conversion circuit 324 can be omitted. Also, incase that data which is outputted to the signal line is of binary, i.e.,digital quantity, there are many cases that the D/A converter circuit324 can be omitted. Also, there is a case that a gamma compensationcircuit is built in the D/A converter circuit 324. As just described,the signal line drive circuit is not limited to FIG. 17.

Describing the operation briefly, the shift register 321 is configuredby use of a plurality of flip-flop circuits (FF) etc., and a clocksignal (S-CLK), a start pulse (SP) and a clock inversion signal (S-CLKb)are applied to them. According to timings of these signals, samplingpulses are outputted sequentially.

The sampling pulses which were outputted from the shift register 321 areinputted to the first latch circuit 322. Video signals area inputted tothe first latch circuit 322, and according to the timing when thesampling pulses are inputted, the video signals are stored at eachcolumn.

In the first latch circuit 322, when the storage of the video signals iscompleted up to a final column, in a horizontal flyback period, a latchpulse (Latch Pulse) is inputted to the second latch circuit 323, and thevideo signals which were stored in the first latch circuit 322 aretransferred simultaneously to the second latch circuit 323. After that,the video signals which were stored in the second latch circuit 323, onerow portion thereof, is simultaneously inputted to the D/A convertercircuit 324. Then, an signal which is inputted from the D/A convertercircuit 324 is inputted to the signal amplifier circuit 325.

During a period that the video signals which were stored in the secondlatch circuit 323 are inputted to the D/A converter circuit 324, in theshift register 321, the sampling pulses are outputted again. After that,this operation is repeated.

Then, a structure of the signal amplifier circuit 325 on the peripheryof the three signal lines from the i-th column to a (i+2)th column willbe described by use of FIG. 16.

The signal amplifier circuit 325 has tow source follower circuits 315,316 with respect to each column. The source follower circuits 315, 316have four terminals of a terminals a to d, respectively. The terminal acorresponds to input terminals of the source follower circuits 315, 316,and the terminal b corresponds to output terminals of the sourcefollower circuits 315, 316. Also, the switches 415, 416 are controlledby a signal which is inputted from the terminal c, and the switches 421,422 are controlled by a signal which is inputted from the terminal d.

Also, in the signal amplifier circuit 325 shown in FIG. 16, between asetting use signal line 326 and the source follower circuits 315, 316,logical operators (inverters) indicated by 327, 328 are disposed. Then,to the terminals c and d, a signal which is outputted from the settinguse signal line 327, or a signal which is outputted from an outputterminal of the above-described logical operator is inputted.

Then, a signal which is outputted from a signal line indicated by thesetting use signal line 326 and a signal which is inputted to respectiveswitches through the terminals c to e, in the source follower circuits315, 316 will be described by use of FIG. 17.

In addition, a switch to which a signal is inputted through theterminals c and d is turned ON when a signal of High is inputted, andwhen a signal of Low is inputted, it is turned OFF.

Then, from the setting use signal line 326, a signal as shown in FIG. 17is inputted. Then, to the terminal c in the source follower circuit 315,a signal which is outputted from the setting use signal line 326 isinputted as it is. To the terminal d, a signal which is outputted froman output terminal of an inverter 327 is inputted. By doing this, in thesource follower circuit 315, it is possible to control so that oneoperation of the setting operation and the output operation is carriedout.

In the same manner, to the terminal c in the source follower circuit316, a signal which is outputted from an output terminal of an inverter328 is inputted. To the terminal d, a signal which is outputted from thesetting use signal line 326 is inputted as it is. By doing this, in thesource follower circuit 316, it is possible to control so that oneoperation of the setting operation and the output operation is carriedout.

As described above, this invention provides an electric circuit whichused a rectification type device through which an electric current flowsonly in a single direction, when an electric potential difference wasapplied to electrodes at both ends of the device. Then, this inventionutilizes a fact that, when a signal voltage is inputted to one terminalof the rectification type device, an electric potential of the otherterminal becomes an electric potential offset only by the thresholdvoltage of the rectification type device.

In sum, even if a variation of the threshold voltage occurs between therectification type devices, the rectification type device can alwaysprovide an electric potential which was offset only by the thresholdvoltage of the rectification type device. The invention can provide anelectric circuit in which affect of a variation of the threshold voltagebetween the rectification type devices was suppressed, by using therectification type device. Then, to suppress an affect of a variation ofthe threshold voltages between the rectification type devicescorresponds to that it is possible to provide an electric circuit inwhich an affect of a variation of the threshold voltages between thetransistors was suppressed.

In addition, there are many cases that a plurality of pixels areconnected to tips of respective signal lines of this signal line drivecircuit. There are many cases that the pixel is one which can change asituation by a voltage which is inputted from the signal line. As anexample, a LCD and an organic EL etc. are cited. Other than that, it ispossible to connect the pixels of various structures.

In addition, it is possible to arbitrarily combine this embodiment modewith the Embodiment modes 1 to 4.

(Embodiment Mode 5)

As an electronic apparatus which used the electric circuit of theinvention, a video camera, a digital camera, a goggle type display (headmount display), a navigation system, an audio reproduction apparatus(car audio, audio component etc.), a notebook type personal computer, agame apparatus, a portable information terminal (mobile computer,portable telephone, portable type game machine or electronic book etc.),an image reproduction apparatus having a recording medium (concretely,apparatus which reproduces a recording medium such as Digital VersatileDisc (DVD) etc. and has a display for displaying its images) etc. arecited. A concrete example of those electronic apparatuses will bedescribed in FIGS. 18A to 18H.

FIG. 18A shows a light emitting apparatus, which includes a housing3001, a support table 3002, a display part 3003, a speaker part 3004, avideo input terminal 3005 etc. This invention can be used for anelectric circuit which comprises the display part 3003. Also, by thisinvention, the light emitting apparatus shown in FIG. 18A isaccomplished. Since the light emitting apparatus is of self-luminoustype, there is no necessity of a back light, and it is possible to forma thinner display part than a liquid crystal display. In addition, thelight emitting apparatus includes all information display use displayapparatuses such as personal computer use, TV broadcasting receptionuse, advertisement display use etc.

FIG. 18B shows a digital still camera, which includes a main body 3101,a display part 3102, a image reception part 3103, an operation key 3104,an external connection port 3105, a shatter 3106 etc. The invention canbe used for an electric circuit which comprises the display part 3102.Also, by this invention, the digital still camera shown in FIG. 18B isaccomplished.

FIG. 18C shows a notebook type personal computer, which includes a mainbody 3201, a housing 3202, a display part 3203, a keyboard 3204, anexternal connection port 3205, a pointing mouse 3206 etc. This inventioncan be used for an electric circuit which comprises the display part3203. Also, by this invention, the light emitting apparatus shown inFIG. 18C is accomplished.

FIG. 18D shows a mobile computer, which includes a main body 3301, adisplay part 3302, a switch 3303, an operation key 3304, an infraredport 3305 etc. This invention can be used for an electric circuit whichcomprises the display part 3302. Also, by this invention, the mobilecomputer shown in FIG. 18D is accomplished.

FIG. 18E shows a portable type image reproduction apparatus having arecording medium (concretely, DVD reproduction apparatus), whichincludes a main body 3401, a housing 3402, a display part A 3403, adisplay part B 3404, a recording medium (DVD etc.) reading part 3405, anoperation key 3406, a speaker part 3407. The display part A 3403 mainlydisplays image information, and the display part B 3404 mainly displayscharacter information and, this invention can be used for an electriccircuit which comprises the display parts A, B 3403, 3404. In addition,the image reproduction apparatus having the recording medium includes ahome use game machine etc. Also, by this invention, the DVD reproductionapparatus shown in FIG. 18E is accomplished.

FIG. 18F shows a goggle type display (head mount display), whichincludes a main body 3501, a display part 3502, and an arm part 3503.This invention can be used for an electric circuit which comprises thedisplay part 3502. Also, by this invention, the goggle type displayshown in FIG. 18F is accomplished.

FIG. 18G shows a video camera, which includes a main body 3601, adisplay part 3602, a housing 3603, an external connection port 3604, aremote control reception part 3605, a image reception part 3606, abattery 3607, a sound input part 3608, an operation key 3609 etc. Thisinvention can be used for an electric circuit which comprises thedisplay part 3602. Also, by this invention, the video camera shown inFIG. 18G is accomplished.

FIG. 18H shows a portable telephone, which includes a main body 3701, ahousing 3702, a display part 3703, a sound input part 3704, a soundoutput part 3705, an operation key 3706, an external connection port3707, an antenna 3708 etc. This invention can be used for an electriccircuit which comprises the display part 3703. In addition, bydisplaying white characters against a black background, it is possibleto suppress electric current consumption of the portable telephone.Also, by this invention, the portable telephone shown in FIG. 18H isaccomplished.

In addition, if light emission luminance of a light emission materialwill become high in the future, it becomes possible to use lightincluding outputted image information for a front type or a rear typeprojector by expanding and projecting the light by use of a lens etc.

Also, there are many cases that the above-described electronic apparatusdisplays information which was distributed through an electroniccommunication line such as Internet and CATV (cable TV) etc., and inparticular, an opportunity for displaying moving image information hasbeen increased. Since response speed of the light emission material isvery high, the light emitting apparatus is desired for moving imagedisplay.

Also, since, as for the light emitting apparatus, a portion which isemitting light consumes electric power, it is desirable to displayinformation so that the portion which emits light is reduced as much aspossible. Accordingly, in case that the light emitting apparatus is usedfor a display part which mainly handles character information like aportable telephone and an audio reproduction apparatus, it is desirableto drive so that the character information is formed at the lightemitting portion a background of a non-light emitting portion.

As described above, an applicable scope of the invention is extremelywide, and it is possible to use it for electronic apparatuses in everyfields. Also, an electric circuit of an any structure shown in theEmbodiment modes 1 to 4 may be used for the electronic apparatus of thisembodiment mode.

This invention provides an electric circuit which used a rectificationtype device in which an electric current is generated only in a singledirection, when an electric potential difference is applied toelectrodes at both ends of the device. Then, the invention utilizes afact that, when a signal voltage is inputted to one terminal of therectification type device, an electric potential of the other terminalbecomes an electric potential offset only by the threshold voltage ofthe rectification type device.

In sum, even if there occurs a variation of the threshold voltagesbetween the rectification type devices, the rectification type devicecan always provide an electric potential offset by only the thresholdvoltage of the rectification type device. This invention, by using theabove-described rectification type device, can provide an electriccircuit in which an affect of a variation of the threshold voltagesbetween the rectification type devices was suppressed. Then, to suppressan affect of a variation of the threshold voltages between therectification type devices corresponds to that it is possible to providean electric circuit in which an affect of a variation of the thresholdvoltages between the transistors was suppressed.

1. An electric circuit for outputting an output electric potentialthrough an output terminal on the basis of an input electric potentialwhich is inputted to an input terminal, comprising: a first transistor;a rectification type device having first and second electrodes, to thefirst electrode of which, the input electric potential is inputted; asecond transistor for inputting a power supply electric potential to thesecond electrode and for converging an electric potential of the secondelectrode with a first electric potential; and a third transistor foroutputting an output electric potential from a source of the firsttransistor, when the first electric potential is inputted to a gateelectrode of the first transistor, wherein the rectifying deviceincludes a fourth transistor, wherein one of the first electrode and thesecond electrode is one of a source and a drain of the fourth transistorand a gate of the fourth transistor, and wherein the other of the firstelectrode and the second electrode is the other of the source and thedrain of the fourth transistor.
 2. An electric circuit for outputting anoutput electric potential V_(out) through an output terminal on thebasis of an input electric potential V_(in) inputted to an inputterminal, comprising: a rectification type device having first andsecond electrodes; a first transistor having gate, third and fourthelectrodes; and a second transistor for getting the output electricpotential V_(out); wherein the first electrode is electrically connectedwith the input terminal; wherein the second electrode is electricallyconnected with the gate electrode of the first transistor; wherein thethird electrode is electrically connected with a wiring; wherein thefourth electrode is electrically connected with one of a source and adrain of the second transistor and the output terminal; and wherein avoltage V, the input electric potential V_(in), and a threshold valuevoltage V_(th) of the rectification type device satisfy a relation ofV>(V_(in)+V_(th)) and the electric circuit comprises a third transistorfor getting the voltage V; wherein the rectifying device includes athird transistor; wherein one of the first electrode and the secondelectrode is one of a source and a drain of the third transistor and agate of the third transistor; and wherein the other of the firstelectrode and the second electrode is the other of the source and thedrain of the third transistor.
 3. The electric circuit according toclaim 2, wherein the the third transistor is a thin film transistor. 4.The electric circuit according to claim 2, wherein the wiring is a powersupply line to which a power supply electric potential is applied.
 5. Asemiconductor device comprising: a rectifying device; a firsttransistor; and a switch; wherein a first electrode of the rectifyingdevice is electrically connected to a gate of the first transistor;wherein one of a source and a drain of the first transistor iselectrically connected to a first power supply line; wherein the otherof the source and the drain of the first transistor is electricallyconnected to a first electrode of the switch; wherein a second electrodeof the switch is electrically connected to a second power supply line;wherein a first electric potential is inputted to a second electrode ofthe rectifying device; wherein a second electric potential is outputtedfrom the other of the source and the drain of the first transistor andthe first electrode of the switch; wherein the rectifying deviceincludes a second transistor; wherein one of the first electrode and thesecond electrode of the rectifying device is one of a source and a drainof the second transistor and a gate of the second transistor, andwherein the other of the first electrode and the second electrode of therectifying device is the other of the source and the drain of the secondtransistor.
 6. A semiconductor device comprising: a rectifying device; afirst transistor; and a second transistor; wherein a first electrode ofthe rectifying device is electrically connected to a gate of the firsttransistor; wherein one of a source and a drain of the first transistoris electrically connected to a first power supply line; wherein theother of the source and the drain of the first transistor iselectrically connected to one of a source and a drain of the secondtransistor; wherein the other of the source and the drain of the secondtransistor is electrically connected to a second power supply line;wherein a first electric potential is inputted to a second electrode ofthe rectifying device; wherein a second electric potential is inputtedto a gate of the second transistor; wherein a third electric potentialis outputted from the other of the source and the drain of the firsttransistor and the one of the source and the drain of the secondtransistor; wherein the rectifying device includes a third transistor;and wherein one of the first electrode and the second electrode of therectifying device is one of a source and a drain of the third transistorand a gate of the third transistor, and wherein the other of the firstelectrode and the second electrode of the rectifying device is the otherof the source and the drain of the third transistor.
 7. Thesemiconductor device according to claim 5, wherein each of the firsttransistor and the second transistor is a thin film transistor.
 8. Asemiconductor device comprising: rectifying device; a transistor; and aswitch; wherein a first electrode of the rectifying device iselectrically connected to a gate of the transistor; wherein one of asource and a drain of the transistor is electrically connected to afirst power supply line; wherein the other of the source and the drainof the transistor is electrically connected to a first electrode of theswitch; wherein a second electrode of the switch is electricallyconnected to a second power supply line; wherein a fist electricpotential is inputted to a second electrode of the rectifying device;wherein a second electric potential is outputted from the other of thesource and the drain of the transistor and the first electrode of theswitch, and wherein the rectifying device comprise a diode.
 9. Thesemiconductor device according to claim 6, wherein each of the firsttransistor, the second transistor, and the third transistor is a thinfilm transistor.
 10. A semiconductor device comprising: a rectifyingdevice; a first transistor; and a second transistor; wherein a fistelectrode of the rectifying device is electrically connected to a gateof the first transistor; wherein one of a source and a drain of thefirst transistor is electrically connected to a first power supply line;wherein the other of the source and the drain of the first transistor iselectrically connected to one of a source and a drain of the secondtransistor; wherein the other of the source and the drain of the secondtransistor is electrically connected to a second power supply line;wherein a second electric potential is inputted to a gate of the secondtransistor; wherein a third electric potential is outputted from theother of the source and the drain of the first transistor and the one ofthe source and the drain of the second transistor, and wherein therectifying device comprises a diode.
 11. The semiconductor deviceaccording to claim 6, wherein the first transistor and the secondtransistor have the same polarity.
 12. An electric apparatus having thesemiconductor device according to claim
 5. 13. An electric apparatushaving the semiconductor device according to claim
 6. 14. Thesemiconductor device according to claim 1, wherein the first transistor,the second transistor, and the third transistor are each a thin filmtransistor.
 15. The semiconductor device according to claim 2, whereinthe first transistor and the second transistor are each a thin filmtransistor.
 16. The semiconductor device according to claim 5, whereinthe first transistor is a thin film transistor.
 17. The semiconductordevice according to claim 6, wherein the first transistor and the secondtransistor are each a thin film transistor.
 18. The semiconductor deviceaccording to claim 5, wherein the second transistor is a thin filmtransistor.
 19. The semiconductor device according to claim 6, whereinthe third transistor is a thin film transistor.
 20. A semiconductordevice comprising: a rectifying device; a first transistor; and aswitch; wherein a first electrode of the rectifying device iselectrically connected to a gate of the first transistor; wherein one ofa source and a drain of the first transistor is electrically connectedto a first power supply line; wherein the other of the source and thedrain of the first transistor is electrically connected to a firstelectrode of the switch; wherein a second electrode of the switch iselectrically connected to a second power supply line; wherein a secondelectrode of the rectifying device is electrically connected to an inputterminal; wherein the other of the source and the drain of the firsttransistor and the first electrode of the switch are electricallyconnected to an output terminal, wherein the rectifying device includesa second transistor, wherein one of the first electrode and the secondelectrode of the rectifying device is one of a source and a drain of thesecond transistor and a gate of the second transistor, and wherein theother of the first and the second electrode of the rectifying device isthe other of the source and the drain of the second transistor.
 21. Thesemiconductor device according to claim 20, wherein each of the firsttransistor and the second transistor is a thin film transistor.
 22. Thesemiconductor device according to claim 20, wherein the secondtransistor is a thin film transistor.
 23. A semiconductor devicecomprising: a rectifying device; a transistor; and a switch; wherein afirst electrode of the rectifying device is electrically connected to agate of the transistor; wherein one of a source and a drain of thetransistor is electrically connected to a first power supply line;wherein the other of the source and the drain of the transistor iselectrically connected to a first electrode of the switch; wherein asecond electrode of the switch is electrically connected to a secondpower supply line; wherein a second electrode of the rectifying deviceis electrically connected to an input terminal; wherein the other of thesource and the drain of the transistor and the first electrode of theswitch are electrically connected to an output terminal, and wherein therectifying device comprises a diode.
 24. The semiconductor deviceaccording to claim 20, wherein the transistor is a thin film transistor.25. An electric apparatus having the semiconductor device according toclaim
 20. 26. A semiconductor device comprising: a rectifying device; afirst transistor; and a second transistor; wherein a first electrode ofthe rectifying device is electrically connected to a gate of the firsttransistor; wherein one of a source and a drain of the first transistoris electrically connected to a first power supply line; wherein theother of the source and the drain of the first transistor iselectrically connected to one of a source and a drain of the secondtransistor; wherein the other of the source and the drain of the secondtransistor is electrically connected to a second power supply line;wherein a second electrode of the rectifying device is electricallyconnected to a first input terminal; wherein a gate of the secondtransistor is electrically connected to a second input terminal; whereinthe other of the source and the drain of the first transistor and theone of the source and the drain of the second transistor areelectrically connected to an output terminal, wherein the rectifyingdevice includes a third transistor, wherein one of the first electrodeand the third electrode of the rectifying device is one of a source anda drain of the third transistor and a gate of the third transistor, andwherein the other of the first electrode and the second electrode of therectifying device is the other of the source and the drain of the thirdtransistor.
 27. The semiconductor device according to claim 26, whereinthe each of the first transistor, the second transistor, and the thirdtransistor is a thin film transistor.
 28. The semiconductor deviceaccording to claim 26, wherein the third transistor is a thin filmtransistor.
 29. A semiconductor device comprising: a rectifying device;a first transistor; and a second transistor; wherein a first electrodeof the rectifying device is electrically connected to a gate of thefirst transistor; wherein one of a source and a drain of the firsttransistor is electrically connected to a first power supply line;wherein the other of the source and the drain of the first transistor iselectrically connected to one of a source and a drain of the secondtransistor; wherein the other of the source and the drain of the secondtransistor is electrically connected to a second power supply line;wherein a second electrode of the rectifying device is electricallyconnected to a first input terminal; wherein a gate of the secondtransistor is electrically connected to a second input terminal; whereinthe other of the source and the drain of the first transistor and theone of the source and the drain of the second transistor areelectrically connected to an output terminal, and wherein the rectifyingdevice comprises a diode.
 30. The semiconductor device according toclaim 26, wherein the first transistor and the second transistor havethe same polarity.
 31. The semiconductor device according to claim 26,wherein the first transistor and the second transistor are each a thinfilm transistor.
 32. An electric apparatus having the semiconductordevice according to claim 26.